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公开(公告)号：US20230056340A1
公开(公告)日：2023-02-23
申请号：US17570091
申请日：2022-01-06
发明人： Linchun Wu , Kun Zhang , Wenxi Zhou , Zhiliang Xia , Wei Xie , Di Wang , Bingguo Wang , Zongliang Huo
IPC分类号： H01L27/11582 , H01L27/11556
摘要： A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. A first thickness of the bottom portion of the channel structure is larger than a second thickness of a top portion of the channel structure.
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公开(公告)号：US11302524B2
公开(公告)日：2022-04-12
申请号：US16862354
申请日：2020-04-29
发明人： Bingguo Wang , Hongxia Ma , Hongbin Zhu
摘要： Embodiments of apparatus and method for testing metal contamination are disclosed. In an example, an apparatus for testing metal contamination includes a chamber in which a test object is placed, a gas supply configured to supply nitrogen gas into the chamber, a pressure controller configured to apply a pressure of at least about 1 torr in the chamber, and a measurement unit configured to measure a concentration of a metal from the test object.
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公开(公告)号：US20210249247A1
公开(公告)日：2021-08-12
申请号：US16862354
申请日：2020-04-29
发明人： Bingguo Wang , Hongxia Ma , Hongbin Zhu
摘要： Embodiments of apparatus and method for testing metal contamination are disclosed. In an example, an apparatus for testing metal contamination includes a chamber in which a test object is placed, a gas supply configured to supply nitrogen gas into the chamber, a pressure controller configured to apply a pressure of at least about 1 torr in the chamber, and a measurement unit configured to measure a concentration of a metal from the test object.
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公开(公告)号：US20230059524A1
公开(公告)日：2023-02-23
申请号：US17570123
申请日：2022-01-06
发明人： Linchun Wu , Kun Zhang , Wenxi Zhou , Zhiliang Xia , Wei Xie , Di Wang , Bingguo Wang , Zongliang Huo
IPC分类号： H01L27/11582 , H01L27/11556
摘要： A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a first angled structure, and a first diameter of the memory film at the bottom portion below the first angled structure is smaller than a second diameter of the memory film at an upper portion above the first angled structure.
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公开(公告)号：US11467084B2
公开(公告)日：2022-10-11
申请号：US16706008
申请日：2019-12-06
发明人： Junzhan Liu , Chao Shen , Zhiliang Xia , Qiangmin Wei , Lei Li , Hai Song , Bingguo Wang
摘要： Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.
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