- 专利标题: THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY
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申请号: US17461278申请日: 2021-08-30
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公开(公告)号: US20230061700A1公开(公告)日: 2023-03-02
- 发明人: Meng-Sheng Chang , Chia-En Huang , Yi-Ching Liu , Yih Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C16/26 ; G11C16/04 ; G11C16/34 ; G11C16/24
摘要:
Disclosed herein are related to a memory array including one-time programmable (OTP) cells. In one aspect, the memory array includes a set of OTP cells including a first subset of OTP cells connected between a first program control line and a first read control line. Each OTP cell of the first subset of OTP cells may include a programmable storage device and a switch connected between the first program control line and the first read control line. The first program control line may extend towards a first side of the memory array along a first direction, and the first read control line may extend towards a second side of the memory array facing away from the first side of the memory array.
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