- 专利标题： FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT DENSITY OF THE SAME
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申请号： US17677654申请日： 2022-02-22
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公开(公告)号： US20230093076A1公开(公告)日： 2023-03-23
- 发明人: Hagyoul BAE , Seunggeol NAM , Jinseong HEO , Sanghyun JO , Dukhyun CHOE
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2021-0125215 20210917
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/66 ; H01L29/51 ; H01L29/66
摘要：
Provided are a ferroelectric semiconductor device and a method of extracting a defect density of the same. A ferroelectric electronic device includes a first layer, an insulating layer including a ferroelectric layer and a first interface that is adjacent to the first layer, and an upper electrode over the insulating layer, wherein the insulating layer has a bulk defect density of 1016 cm−3eV−1 or more and an interface defect density of 1010 cm−2eV−1 or more.
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