- 专利标题: SRAM POWER SAVINGS AND WRITE ASSIST
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申请号: US17488519申请日: 2021-09-29
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公开(公告)号: US20230100607A1公开(公告)日: 2023-03-30
- 发明人: Russell J. Schreiber , John J. Wuu , Keith A. Kasprak
- 申请人: Advanced Micro Devices, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G11C11/419
- IPC分类号: G11C11/419
摘要:
A technique reduces power consumption of a bit cell in a memory and provides write assistance to the bit cell. When the bit cell is active, a power-saving write-assist circuit coupled to the bit cell is selectively sized according to a type of memory access. When the bit cell is inactive, the virtual power supply node floats to a predetermined voltage between a first voltage on a first power supply node coupled to the bit cell and a second voltage on a second power supply node coupled to the bit cell. A method for controlling power consumption of a bit cell and assisting a write to the bit cell includes providing a reference voltage to a virtual power supply node coupled to the bit cell. The reference voltage is provided based on an operational state of the bit cell and a type of memory access to the bit cell.
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