Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by an insulating layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor and can be switched through the application of an input voltage to the MEMTJ that causes the magnetoelectric switching capacitor to switch states. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The magnetization orientation of a ferromagnetic free layer common to the MTJs is coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of the ferromagnetic free layer is based on the power supply voltage applied to the ferromagnetic reference layer of the MTJ having a magnetization orientation parallel to that of the ferromagnetic free layer.