Invention Application
- Patent Title: Carbon and/or Oxygen Doped Polysilicon Resistor
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Application No.: US17490950Application Date: 2021-09-30
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Publication No.: US20230112644A1Publication Date: 2023-04-13
- Inventor: Yanbiao Pan , Robert Martin Higgins , Bhaskar Srinivasan , Pushpa Mahalingam
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02 ; H01L21/285
Abstract:
Apparatus, and their methods of manufacture, that include an insulating feature above a substrate and a resistor formed on the insulating feature. Forming the resistor includes depositing polysilicon and doping the polysilicon (e.g., in-situ) with a carbon dopant and/or an oxygen dopant.
Public/Granted literature
- US12027515B2 Carbon and/or oxygen doped polysilicon resistor Public/Granted day:2024-07-02
Information query
IPC分类:
