- 专利标题: Methods For Wet Atomic Layer Etching Of Ruthenium
-
申请号: US17674579申请日: 2022-02-17
-
公开(公告)号: US20230118554A1公开(公告)日: 2023-04-20
- 发明人: Paul Abel
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 主分类号: C23F1/30
- IPC分类号: C23F1/30
摘要:
The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.