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    Ruthenium CMP Chemistry Based On Halogenation
    2.
    发明申请
    Ruthenium CMP Chemistry Based On Halogenation 有权

    公开(公告)号：US20230118455A1

    公开(公告)日：2023-04-20

    申请号：US17674593

    申请日：2022-02-17

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel

    IPC: C09G1/02 ,  C09K13/00 ,  C09K13/02 ,  H01L21/321

    Abstract: The present disclosure provides a new corrosion control chemistry for use in ruthenium (Ru) chemical-mechanical polishing (CMP) processes. More specifically, the present disclosure provides an improved CMP slurry chemistry and CMP process for planarizing a ruthenium surface. In the CMP process disclosed herein, a ruthenium surface (e.g., a post-etch ruthenium surface) is exposed to a CMP slurry containing a halogenation reagent, which reacts with the ruthenium surface to create a halogenated ruthenium surface, and a ligand for ligand-assisted reactive dissolution of the halogenated ruthenium surface. Relative amounts of the halogenation agent and the ligand can be controlled in the CMP slurry, so as to provide a diffusion-limited etch process that improves pos-etch surface morphology, while providing high material removal rates.

    METHODS FOR WET ATOMIC LAYER ETCHING OF MOLYBDENUM
    3.
    发明申请
    METHODS FOR WET ATOMIC LAYER ETCHING OF MOLYBDENUM 有权

    公开(公告)号：US20250079180A1

    公开(公告)日：2025-03-06

    申请号：US18240142

    申请日：2023-08-30

    Applicant: Tokyo Electron Limited

    Inventor： Tulashi Dahal ,  Paul Abel ,  Mengistie Debasu

    IPC: H01L21/311 ,  H01L21/02

    Abstract: Systems and methods are provided for etching molybdenum in a wet ALE process. The methods disclosed herein use a wide variety of techniques and wet etch chemistries to oxidize a molybdenum surface and form a self-limiting, molybdenum oxide passivation layer in a surface modification step of the wet ALE process. For example, the methods use: (a) ultra-violet (UV) photolysis of peroxide oxidizers to create oxidizing radicals, which limit oxidation of the molybdenum surface and provide quasi-self-limiting oxidation behavior, (b) steric hinderance of oxidizers having large reactant molecules to achieve better self-limiting oxidation behavior, and/or (c) ligand-assisted oxidation to change the surface chemistry of the molybdenum oxide passivation layer and ensure self-limiting oxidation behavior. After forming the molybdenum oxide passivation layer using one or more of the oxidation techniques disclosed herein, the passivation layer is selectively removed in a dissolution step of the wet ALE process to etch the molybdenum surface.

    Methods For Selective Removal Of Surface Oxides On Metal Films
    4.
    发明公开
    Methods For Selective Removal Of Surface Oxides On Metal Films 审中-公开

    公开(公告)号：US20230402276A1

    公开(公告)日：2023-12-14

    申请号：US17838440

    申请日：2022-06-13

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Paul Abel ,  Mengistie Debasu

    IPC: H01L21/02 ,  C23G1/10

    CPC classification number: H01L21/0206 ,  C23G1/10

    Abstract: The present disclosure provides new processes and methods to pre-treat metal surfaces in the back end of line (BEOL) fabrication of integrated circuits (ICs). More specifically, the present disclosure provides selective, self-limiting processes and methods for stripping native oxide surface layers that may form on exposed metal surfaces during processing of ICs. The processes and methods disclosed herein utilize the fundamental concepts of metal complexation to provide a novel solution, which enables native oxide surface layers to be selectively removed from exposed metal films in a self-limiting manner. In particular, the disclosed processes and methods use complexing agents (e.g., ligands) to selectively dissolve native oxide surface layers, without significantly etching or removing the underlying metal film.

    Methods for wet atomic layer etching of ruthenium
    5.
    发明授权
    Methods for wet atomic layer etching of ruthenium 有权

    公开(公告)号：US11802342B2

    公开(公告)日：2023-10-31

    申请号：US17674579

    申请日：2022-02-17

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel

    IPC: C23F1/30

    CPC classification number: C23F1/30

    Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.

    Methods For Wet Atomic Layer Etching Of Ruthenium
    6.
    发明申请
    Methods For Wet Atomic Layer Etching Of Ruthenium 有权

    公开(公告)号：US20230118554A1

    公开(公告)日：2023-04-20

    申请号：US17674579

    申请日：2022-02-17

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel

    IPC: C23F1/30

    Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.

    METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING SURFACE ALKYLATION
    9.
    发明申请
    METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING SURFACE ALKYLATION 有权

    公开(公告)号：US20250079181A1

    公开(公告)日：2025-03-06

    申请号：US18240069

    申请日：2023-08-30

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel

    IPC: H01L21/311

    Abstract: Embodiments of processes and methods that provide selective etching of silicon nitride are disclosed herein. More specifically, new processes, methods and etch chemistries are provided to selectively etch silicon nitride layers formed on a substrate, while protecting silicon oxide layers formed on the same substrate. In the method embodiments, a substrate having a silicon nitride (SiN) layer and a silicon oxide layer formed on the same substrate is exposed to an alkylating agent, which reacts with the amine groups on the exposed SiN surfaces to form an alkylated surface layer on the SiN layer. The substrate is exposed to a fluorinating agent to remove the alkylated surface layer and selectively etch the SiN layer without significantly etching the silicon oxide layer. The disclosed methods can be used to selectively etch silicon nitride over silicon oxide using a wet or dry process.

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