Invention Application
- Patent Title: HIGH ASPECT RATIO VIA FILL PROCESS EMPLOYING SELECTIVE METAL DEPOSITION AND STRUCTURES FORMED BY THE SAME
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Application No.: US18059698Application Date: 2022-11-29
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Publication No.: US20230130849A1Publication Date: 2023-04-27
- Inventor: Takashi YAMAHA , Tatsuya HINOUE , Fumitaka AMANO
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX ADDISON
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX ADDISON
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L23/532 ; H01L27/11556 ; H01L27/11582 ; H01L21/768

Abstract:
A metal interconnect assembly includes a first metal interconnect structure, and a second metal interconnect structure embedded in a second dielectric material layer and containing a metal line portion having a top surface located within a first horizontal plane and having a bottom surface located within a second horizontal plane, and further containing a metal via portion adjoined to a bottom of the metal line portion and contacting a top surface of the first metal interconnect structure. The second metal interconnect structure contains a metallic liner including a first metallic material that includes an entire volume of the metal via portion and an outer part of the metal line portion, and a metallic fill material portion contains a second metallic material that includes an inner part of the metal line portion, does not contact and is spaced from the second dielectric material layer by the metallic liner.
Information query
IPC分类: