Invention Application
- Patent Title: PROCESS FOR MANUFACTURING A SILICON CARBIDE DEVICE AND SILICON CARBIDE DEVICE
-
Application No.: US17962135Application Date: 2022-10-07
-
Publication No.: US20230131049A1Publication Date: 2023-04-27
- Inventor: Paolo BADALA' , Massimo BOSCAGILA , Domenico Pierpaolo MELLO , Anna BASSI , Valentina SCUDERI , Giovanni FRANCO
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.r.l.
- Current Assignee: STMICROELECTRONICS S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Priority: IT102021000027101 20211021
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324
Abstract:
A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.
Information query
IPC分类:
