公开(公告)号：US20230343831A1

公开(公告)日：2023-10-26

申请号：US18309584

申请日：2023-04-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US20220005702A1

公开(公告)日：2022-01-06

申请号：US17368437

申请日：2021-07-06

Applicant: STMicroelectronics S.r.l.

Inventor： Nicolo' PILUSO ,  Andrea SEVERINO ,  Stefania RINALDI Beatrice ,  AngeloAnnibale MAZZEO ,  Leonardo CAUDO ,  Alfio RUSSO ,  Giovanni FRANCO ,  Anna BASSI

IPC: H01L21/306 ,  H01L21/02

Abstract: A process for manufacturing a silicon carbide semiconductor device includes providing a silicon carbide wafer, having a substrate. An epitaxial growth for formation of an epitaxial layer, having a top surface, is carried out on the substrate. Following upon the step of carrying out an epitaxial growth, the process includes the step of removing a surface portion of the epitaxial layer starting from the top surface so as to remove surface damages present at the top surface as a result of propagation of dislocations from the substrate during the previous epitaxial growth and so as to define a resulting top surface substantially free of defects.

公开(公告)号：US20250022919A1

公开(公告)日：2025-01-16

申请号：US18781808

申请日：2024-07-23

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNÀ ,  Paolo BADALÀ ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US20220415655A1

公开(公告)日：2022-12-29

申请号：US17847679

申请日：2022-06-23

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo BADALA' ,  Anna BASSI ,  Massimo BOSCAGLIA ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/872 ,  H01L29/78

Abstract: A metal layer is deposited on a wafer that has silicon carbide, wherein the metal layer forms a contact face. A laser annealing is performed at the contact face using a laser beam application that causes the metal layer to react with the wafer and form a silicide layer. The laser beam has a footprint having a size. To laser anneal the contact face, a first portion of the contact face is irradiated, the footprint of the laser beam is moved by a step smaller than the size of the footprint, and a second portion of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

公开(公告)号：US20210280424A1

公开(公告)日：2021-09-09

申请号：US17190722

申请日：2021-03-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Mario Giuseppe SAGGIO ,  Giovanni FRANCO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

公开(公告)号：US20230411158A1

公开(公告)日：2023-12-21

申请号：US18459273

申请日：2023-08-31

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Mario Giuseppe SAGGIO ,  Giovanni FRANCO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

CPC classification number: H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

公开(公告)号：US20230298887A1

公开(公告)日：2023-09-21

申请号：US18181415

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02378 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/02164 ,  H01L21/02527

Abstract: Process for manufacturing a 3C-SiC layer, comprising the steps of: providing a wafer of 4H-SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer, a Silicon layer on the 3C-SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C-SiC layer. If the Silicon layer is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer. The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

公开(公告)号：US20230131049A1

公开(公告)日：2023-04-27

申请号：US17962135

申请日：2022-10-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Massimo BOSCAGILA ,  Domenico Pierpaolo MELLO ,  Anna BASSI ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/02 ,  H01L21/324

Abstract: A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

公开(公告)号：US20230094592A1

公开(公告)日：2023-03-30

申请号：US17949057

申请日：2022-09-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Valentina SCUDERI ,  Anna BASSI ,  Massimo BOSCAGLIA ,  Giovanni FRANCO

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  H01L21/268

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer, which has a silicon carbide substrate having a work face, is processed. A rough face is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer having a plurality of protrusions of silicide.

公开(公告)号：US20210328023A1

公开(公告)日：2021-10-21

申请号：US17226003

申请日：2021-04-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone RASCUNÁ ,  Paolo BADALÁ ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.