公开(公告)号：US20230131049A1

公开(公告)日：2023-04-27

申请号：US17962135

申请日：2022-10-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Massimo BOSCAGILA ,  Domenico Pierpaolo MELLO ,  Anna BASSI ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/02 ,  H01L21/324

Abstract: A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.