公开(公告)号：US20220415655A1

公开(公告)日：2022-12-29

申请号：US17847679

申请日：2022-06-23

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo BADALA' ,  Anna BASSI ,  Massimo BOSCAGLIA ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/872 ,  H01L29/78

Abstract: A metal layer is deposited on a wafer that has silicon carbide, wherein the metal layer forms a contact face. A laser annealing is performed at the contact face using a laser beam application that causes the metal layer to react with the wafer and form a silicide layer. The laser beam has a footprint having a size. To laser anneal the contact face, a first portion of the contact face is irradiated, the footprint of the laser beam is moved by a step smaller than the size of the footprint, and a second portion of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

公开(公告)号：US20230131049A1

公开(公告)日：2023-04-27

申请号：US17962135

申请日：2022-10-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Massimo BOSCAGILA ,  Domenico Pierpaolo MELLO ,  Anna BASSI ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/02 ,  H01L21/324

Abstract: A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

公开(公告)号：US20230094592A1

公开(公告)日：2023-03-30

申请号：US17949057

申请日：2022-09-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Valentina SCUDERI ,  Anna BASSI ,  Massimo BOSCAGLIA ,  Giovanni FRANCO

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  H01L21/268

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer, which has a silicon carbide substrate having a work face, is processed. A rough face is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer having a plurality of protrusions of silicide.