A reliable mask layout correction method capable of manufacturing a mask including a curvilinear pattern, and a mask manufacturing method including the correction method. The mask layout correction method based on machine learning may include: acquiring optical proximity correction (OPC)-ed layout images for masks including a curvilinear pattern, extracting mask contour images from scanning electron microscope (SEM) images for masks manufactured based on the OPC-ed layout images, performing machine learning using the OPC-ed layout images and the mask contour images to generate a conversion model, and correcting the OPC-ed layout images using the conversion model.