Invention Application
- Patent Title: METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS
-
Application No.: US17590863Application Date: 2022-02-02
-
Publication No.: US20230133731A1Publication Date: 2023-05-04
- Inventor: Gunho Jo , Ki-il Kim , Byounghak Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Main IPC: H01L21/822
- IPC: H01L21/822 ; H01L27/06 ; H01L27/088 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L29/78 ; H01L21/02 ; H01L21/306 ; H01L21/308 ; H01L21/8234 ; H01L29/66

Abstract:
Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.
Public/Granted literature
- US12255099B2 Methods of forming fin-on-nanosheet transistor stacks Public/Granted day:2025-03-18
Information query
IPC分类: