- 专利标题: SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
-
申请号: US18147228申请日: 2022-12-28
-
公开(公告)号: US20230135117A1公开(公告)日: 2023-05-04
- 发明人: Tetsuya KAMIMURA
- 申请人: FUJIFILM Corporation
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2016-172239 20160902,JP2017-166461 20170831
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/32 ; G03F7/075 ; G03F7/00 ; H01L21/027 ; G03F7/16 ; G03F7/20 ; G03F7/38
摘要:
An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability.
Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.
The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.
Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution.
The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.