发明公开
- 专利标题: Semiconductor Device and Method for Sensing External Condition in Harsh Environment
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申请号: US18334402申请日: 2023-06-14
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公开(公告)号: US20240003768A1公开(公告)日: 2024-01-04
- 发明人: Paweena Phatto , Maythichai Saithong , Eakkasit Dumsong , Jiraphat Charoenratpratoom
- 申请人: UTAC Headquarters Pte. Ltd.
- 申请人地址: SG Singapore
- 专利权人: UTAC Headquarters Pte. Ltd.
- 当前专利权人: UTAC Headquarters Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 主分类号: G01L9/00
- IPC分类号: G01L9/00 ; H01L23/00 ; H01L25/065 ; H01L25/00
摘要:
A semiconductor device has a substrate and a first electrical component including a sensing region disposed over the substrate. The sensing region can be responsive to external stimuli, such as pressure. A cover lid is disposed over the first electrical component and extending to the substrate with an opening in the cover lid aligned over the sensing region. A gel material is disposed within the opening of the cover lid to seal the sensing region with respect to an environment condition, such as liquid. A bond wire is coupled between the first electrical component and substrate. An adhesive layer is disposed around a perimeter of the sensing area and the cover lid is bonded to the adhesive layer. A second electrical component is disposed on the substrate and the first electrical component is disposed on the second electrical component.
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