Embodiments herein relate to systems, apparatuses, or processes for forming a silicide and a silicon nitrate layer between a copper feature and dielectric to reduce delamination of the dielectric. Embodiments allow an unroughened surface for the copper feature to reduce the insertion loss for transmission lines that go through the unroughened surface of the copper. Embodiments may include sequential interlayers between a dielectric and copper. Other embodiments may be described and/or claimed.