发明公开
- 专利标题： SELF ALIGNED PATTERN FORMATION POST SPACER ETCHBACK IN TIGHT PITCH CONFIGURATIONS
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申请号： US18140425申请日： 2023-04-27
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公开(公告)号： US20240096627A1公开(公告)日： 2024-03-21
- 发明人: Sean D. Burns , Lawrence A. Clevenger , Matthew E. Colburn , Nelson M. Felix , Sivananda K. Kanakasabapathy , Christopher J. Penny , Roger A. Quon , Nicole A. Saulnier
- 申请人： Tessera LLC
- 申请人地址： US CA San Jose
- 专利权人： Tessera LLC
- 当前专利权人： Tessera LLC
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01L23/528
摘要：
A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.
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