公开(公告)号：US12106963B2

公开(公告)日：2024-10-01

申请号：US18140425

申请日：2023-04-27

申请人： Tessera LLC

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L21/027 ,  H01L21/28 ,  H01L21/31 ,  H10K71/20 ,  H10N70/00

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31 ,  H01L21/76897 ,  H01L2224/0362 ,  H01L2224/11622 ,  H10K71/233 ,  H10N70/063

摘要： A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US20240096627A1

公开(公告)日：2024-03-21

申请号：US18140425

申请日：2023-04-27

申请人： Tessera LLC

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L21/31 ,  H01L2224/11622

摘要： A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US11670510B2

公开(公告)日：2023-06-06

申请号：US17328569

申请日：2021-05-24

申请人： Tessera LLC

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/31 ,  H01L21/027 ,  H01L45/00 ,  H01L21/28 ,  H01L51/00

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31 ,  H01L21/76897 ,  H01L45/1675 ,  H01L51/0018 ,  H01L2224/0362 ,  H01L2224/11622

摘要： A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.