- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US18456623申请日： 2023-08-28
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公开(公告)号： US20240096690A1公开(公告)日： 2024-03-21
- 发明人: Shingo HONDA
- 申请人： Kioxia Corporation
- 申请人地址： JP Tokyo
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP 22149903 2022.09.21
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H10B69/00
摘要：
A semiconductor device includes a first layer including a first recess portion on an upper surface; and a second recess portion that extends from a bottom surface of the first recess portion in the first layer, and the second recess portion has a tapered shape in which a width in a first direction along a surface direction of the first layer reduces from the bottom surface of the first recess portion in a depth direction of the first layer.
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