公开(公告)号：US20240096690A1

公开(公告)日：2024-03-21

申请号：US18456623

申请日：2023-08-28

申请人： Kioxia Corporation

发明人： Shingo HONDA

IPC分类号： H01L21/768 ,  H01L23/522 ,  H10B69/00

CPC分类号： H01L21/76804 ,  H01L23/5226 ,  H10B69/00

摘要： A semiconductor device includes a first layer including a first recess portion on an upper surface; and a second recess portion that extends from a bottom surface of the first recess portion in the first layer, and the second recess portion has a tapered shape in which a width in a first direction along a surface direction of the first layer reduces from the bottom surface of the first recess portion in a depth direction of the first layer.

公开(公告)号：US20220084824A1

公开(公告)日：2022-03-17

申请号：US17459400

申请日：2021-08-27

申请人： Kioxia Corporation

发明人： Shingo HONDA

IPC分类号： H01L21/033 ,  H01L23/522 ,  H01L23/528 ,  H01L21/311 ,  H01J37/32 ,  G03F7/20 ,  G03F7/16

摘要： A semiconductor manufacturing system includes a calculation unit that calculates an inclination degree of an incidence direction of an etchant in an etching device according to a worn state of a part of the etching device. A correction unit corrects a second exposure pattern so that an edge position in the second exposure pattern including an edge is shifted from a first exposure pattern according to the calculated inclination degree. An exposure device exposes a second resist film formed on the substrate from which a first resist pattern is removed with the second exposure pattern. A development device develops the second resist film and forms a second resist pattern on the substrate. The etching device performs etching processing on the substrate by using the second resist pattern as a mask.