Invention Publication
- Patent Title: STRUCTURE AND METHOD FOR FORMING OHMIC CONTACTS TO N FACE BULK GAN SUBSTRATE
-
Application No.: US17941192Application Date: 2022-09-09
-
Publication No.: US20240097072A1Publication Date: 2024-03-21
- Inventor: Max Batres , Thomas Wunderer
- Applicant: PALO ALTO RESEARCH CENTER INCORPORATED
- Applicant Address: US CA Palo Alto
- Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee Address: US CA Palo Alto
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L21/02
Abstract:
A semiconductor device is formed on a bulk substrate of n-type GaN. The semiconductor device has a material layer grown on the bulk substrate. A first surface of the bulk substrate facing away from the material layer is mechanically roughened and a negative electrical contact is formed on the roughened surface using a low work function metal.
Information query
IPC分类:
