公开(公告)号：US20240097072A1

公开(公告)日：2024-03-21

申请号：US17941192

申请日：2022-09-09

申请人： PALO ALTO RESEARCH CENTER INCORPORATED

发明人： Max Batres ,  Thomas Wunderer

IPC分类号： H01L33/32 ,  H01L21/02

CPC分类号： H01L33/32 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/0254

摘要： A semiconductor device is formed on a bulk substrate of n-type GaN. The semiconductor device has a material layer grown on the bulk substrate. A first surface of the bulk substrate facing away from the material layer is mechanically roughened and a negative electrical contact is formed on the roughened surface using a low work function metal.

公开(公告)号：US20240036364A1

公开(公告)日：2024-02-01

申请号：US17875620

申请日：2022-07-28

申请人： PALO ALTO RESEARCH CENTER INCORPORATED

发明人： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang ,  Max Batres

IPC分类号： G02F1/01

CPC分类号： G02F1/0147

摘要： A transfer system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A side of the transfer layer is placed in contact with an outward-facing side of a chiplet during a transfer operation. An optical absorber material is located on at least one of the outward facing side of the chiplet or an inward facing side of the chiplet. An optical energy source is operable to apply optical energy to the optical absorber material through the transfer layer to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet.

公开(公告)号：US10249786B2

公开(公告)日：2019-04-02

申请号：US15363050

申请日：2016-11-29

申请人： PALO ALTO RESEARCH CENTER INCORPORATED

发明人： Max Batres ,  Zhihong Yang ,  Thomas Wunderer

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/78 ,  H01L29/20 ,  H01L29/32 ,  H01L33/02 ,  H01L33/32 ,  H01S5/183 ,  H01S5/323

摘要： A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2.

公开(公告)号：US20240047622A1

公开(公告)日：2024-02-08

申请号：US17879902

申请日：2022-08-03

申请人： PALO ALTO RESEARCH CENTER INCORPORATED

发明人： Thomas Wunderer ,  Max Batres ,  Chris Chua

IPC分类号： H01L33/46 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38

CPC分类号： H01L33/465 ,  H01L33/007 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  G02B27/0172

摘要： A light emitting diode (LED) array includes bottom reflectors patterned as an array of closed shapes on a top plane of a base layer for III-N growth. A three-dimensional III-N structure is epitaxially grown around the array of closed shapes and extending above the bottom reflectors. The three-dimensional III-N structures is a contiguous crystalline structure extending across the array. A laterally grown III-N layer is formed in contact with both the reflectors and the three-dimensional III-N structures, and III-N LED layers are grown on the laterally grown layer. One or more top reflectors are grown or deposited on the III-N LED layers and located over the bottom reflectors.