- 专利标题： THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
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申请号： US17983570申请日： 2022-11-09
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公开(公告)号： US20240098994A1公开(公告)日： 2024-03-21
- 发明人: Linchun Wu , Shuangshuang Wu , Lei Li , Kun Zhang , Zhiliang Xia , Zongliang Huo
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 优先权： CN 2211124065.8 2022.09.15 CN 2211124454.0 2022.09.15
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582
摘要：
A three-dimensional (3D) memory device includes a stack structure including interleaved first conductive layers and first dielectric layers, and a channel structure extending through the stack structure along a first direction in contact with a first semiconductor layer at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The semiconductor channel includes an angled structure, and a first width of the semiconductor channel at the bottom portion of the channel structure below the angled structure is smaller than a second width of the semiconductor channel at an upper portion of the channel structure above the angled structure.
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