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公开(公告)号：US20230413541A1
公开(公告)日：2023-12-21
申请号：US17843636
申请日：2022-06-17
发明人： Kun Zhang , Wenxi Zhou , Shuangshuang Wu
IPC分类号： H01L27/11556 , H01L27/11521
CPC分类号： H01L27/11556 , H01L27/11521
摘要： Three-dimensional (3D) memory devices and methods for forming the same are disclosed. The 3D memory device includes a doped semiconductor layer, a source select gate line disposed on the doped semiconductor layer, a stack structure including interleaved conductive layers and dielectric layers formed on the source select gate line, and a channel structure extending through the stack structure and the source select gate line and in contact with the doped semiconductor layer. The channel structure includes a semiconductor channel and a memory film. The source select gate line is in contact with the semiconductor channel.
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公开(公告)号：US20240074181A1
公开(公告)日：2024-02-29
申请号：US17896959
申请日：2022-08-26
发明人： Linchun Wu , Kun Zhang , Wenxi Zhou , Cuicui Kong , Shuangshuang Wu , Zhiliang Xia , Zongliang Huo
IPC分类号： H01L27/11582 , H01L23/528 , H01L27/11519 , H01L27/11556 , H01L27/11565
CPC分类号： H01L27/11582 , H01L23/5283 , H01L27/11519 , H01L27/11556 , H01L27/11565
摘要： A memory device includes a stack structure, channel structures, and a slit structure. The stack structure includes interleaved conductive layers and dielectric layers, and the conductive layers include a plurality of word lines. Each of the channel structures extends vertically through the stack structure. The slit structure extends vertically through the stack structure. An outer region of the stack structure includes a staircase structure, and the interleaved conductive layers and dielectric layers in a bottom portion of the stack structure are wider than the interleaved conductive layers and dielectric layers in a top portion of the stack structure. A first outer width of the slit structure in the bottom portion of the stack structure is greater than a second outer width of the slit structure in the top portion of the stack structure.
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公开(公告)号：US20230225124A1
公开(公告)日：2023-07-13
申请号：US18081614
申请日：2022-12-14
发明人： Linchun Wu , Kun Zhang , Wenxi Zhou , Shuangshuang Wu , Zhiliang Xia , Zongliang Huo
摘要： A three-dimensional (3D) memory device includes a stack structure including interleaved first conductive layers and first dielectric layers, a channel structure extending through the stack structure along a first direction in contact with a first semiconductor layer at a bottom portion of the channel structure, and a slit structure extending through the stack structure along the first direction. The slit structure includes a slit core, and a second dielectric layer surrounding the slit core. A first width of the second dielectric layer near the first semiconductor layer is larger than a second width of the second dielectric layer away from the first semiconductor layer.
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公开(公告)号：US20240188292A1
公开(公告)日：2024-06-06
申请号：US18091000
申请日：2022-12-29
发明人： Cuicui Kong , Kun Zhang , Yuhui Han , Linchun Wu , Shuangshuang Wu , Zhiliang Xia , Zongliang Huo , Jingtao Xie , Bingjie Yan , Di Wang , Wenxi Zhou
CPC分类号： H01L27/11582 , H01L27/11556
摘要： In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a second region, and word lines each extending from the first region into at least a portion of the second region. At least one word line pick-up structure includes multiple sections each electrically connected to a different word line.
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公开(公告)号：US20240098994A1
公开(公告)日：2024-03-21
申请号：US17983570
申请日：2022-11-09
发明人： Linchun Wu , Shuangshuang Wu , Lei Li , Kun Zhang , Zhiliang Xia , Zongliang Huo
IPC分类号： H01L27/11582
CPC分类号： H01L27/11582
摘要： A three-dimensional (3D) memory device includes a stack structure including interleaved first conductive layers and first dielectric layers, and a channel structure extending through the stack structure along a first direction in contact with a first semiconductor layer at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The semiconductor channel includes an angled structure, and a first width of the semiconductor channel at the bottom portion of the channel structure below the angled structure is smaller than a second width of the semiconductor channel at an upper portion of the channel structure above the angled structure.
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