- 专利标题: DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION
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申请号: US17957945申请日: 2022-09-30
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公开(公告)号: US20240112730A1公开(公告)日: 2024-04-04
- 发明人: Sou-Chi Chang , Nazila Haratipour , Saima Siddiqui , Uygar Avci , Chia-Ching Lin
- 申请人: Intel Corporation
- 申请人地址: US CA Santa CLara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; G11C11/22 ; H01L45/00
摘要:
Techniques and mechanisms for storing data with a memory cell which comprises a ferroelectric (FE) resistive junction. In an embodiment, a memory cell comprises a transistor and a FE resistive junction structure which is coupled to the transistor. The FE resistive junction structure comprises electrode structures, and a layer of a material which is between said electrode structures, wherein the material is a FE oxide or a FE semiconductor. The FE resistive junction structure selectively provides any of various levels of resistance, each to represent a respective one or more bits. A current flow through the FE resistive junction structure is characterized by thermionic emission through a Schottky barrier at an interface with one of the electrode structures. In another embodiment, the FE resistive junction structure further comprises one or more dielectric layers each between the layer of material and a different respective one of the electrode structures.
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