Invention Publication
- Patent Title: Programming of a Selected Non-volatile Memory Cell by Changing Programming Pulse Characteristics
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Application No.: US18530832Application Date: 2023-12-06
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Publication No.: US20240120009A1Publication Date: 2024-04-11
- Inventor: Hieu Van Tran , STEVEN LEMKE , NHAN DO , Mark REITEN
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G06F17/16 ; G06N3/0442 ; G06N3/063 ; G11C11/54
Abstract:
In one example, a method comprises applying a first programming pulse to a terminal of a selected non-volatile memory cell; and applying a second programming pulse to the terminal of the selected non-volatile memory cell, wherein a magnitude of a voltage the second programming pulse is equal to or lower than a magnitude of a voltage of the first programming pulse; wherein the selected non-volatile memory cell is programmed to a target value by the first programming pulse and the second programming pulse.
Information query
