- 专利标题： MIXED-KERNEL HETEROJUNCTION TRANSISTORS, FABRICATING METHODS, AND APPLICATIONS OF THE SAME
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申请号： US18376040申请日： 2023-10-03
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公开(公告)号： US20240138160A1公开(公告)日： 2024-04-25
- 发明人: Mark C. Hersam , Xiaodong Yan , Justin H. Qian , Jiahui Ma , Vinod K. Sangwan , Han Wang
- 申请人： NORTHWESTERN UNIVERSITY , UNIVERSITY OF SOUTHERN CALIFORNIA
- 申请人地址： US IL Evanston
- 专利权人： NORTHWESTERN UNIVERSITY,UNIVERSITY OF SOUTHERN CALIFORNIA
- 当前专利权人： NORTHWESTERN UNIVERSITY,UNIVERSITY OF SOUTHERN CALIFORNIA
- 当前专利权人地址： US IL Evanston
- 主分类号： H10K19/20
- IPC分类号： H10K19/20 ; A61B5/308 ; A61B5/332 ; A61B5/339 ; A61B5/349 ; H10K19/10 ; H10K85/20
摘要：
This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.
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