专利检索 ap:("NORTHWESTERN UNIVERSITY" OR "UNIVERSITY OF SOUTHERN CALIFORNIA") AND inv:"Xiaodong Yan" 第 1 页

1.

发明公开
MIXED-KERNEL HETEROJUNCTION TRANSISTORS, FABRICATING METHODS, AND APPLICATIONS OF THE SAME 审中-公开

公开(公告)号：US20240138160A1

公开(公告)日：2024-04-25

申请号：US18376040

申请日：2023-10-03

申请人： NORTHWESTERN UNIVERSITY , UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Mark C. Hersam , Xiaodong Yan , Justin H. Qian , Jiahui Ma , Vinod K. Sangwan , Han Wang

IPC分类号： H10K19/20 , A61B5/308 , A61B5/332 , A61B5/339 , A61B5/349 , H10K19/10 , H10K85/20

CPC分类号： H10K19/20 , A61B5/308 , A61B5/332 , A61B5/339 , A61B5/349 , H10K19/10 , H10K85/221

摘要： This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.