公开(公告)号：US20240138160A1

公开(公告)日：2024-04-25

申请号：US18376040

申请日：2023-10-03

申请人： NORTHWESTERN UNIVERSITY ,  UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Mark C. Hersam ,  Xiaodong Yan ,  Justin H. Qian ,  Jiahui Ma ,  Vinod K. Sangwan ,  Han Wang

IPC分类号： H10K19/20 ,  A61B5/308 ,  A61B5/332 ,  A61B5/339 ,  A61B5/349 ,  H10K19/10 ,  H10K85/20

CPC分类号： H10K19/20 ,  A61B5/308 ,  A61B5/332 ,  A61B5/339 ,  A61B5/349 ,  H10K19/10 ,  H10K85/221

摘要： This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.

公开(公告)号：US20240188303A1

公开(公告)日：2024-06-06

申请号：US18562729

申请日：2022-06-22

申请人： UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Han Wang ,  Jiang-Bin Wu ,  Hung-Yu Chen

IPC分类号： H10B53/00

CPC分类号： H10B53/00 ,  H01L28/40

摘要： An apparatus for novel high-speed low power non-volatile memory for the next generation electronic memory and computing technology is provided. The apparatus may include a ferroelectric tunnel junction (FTJ) that can switch between two or more conductance states in a reversible and non-volatile manner. A ferroelectric tunnel junction (FTJ) having two electrodes separated by a thin ferroelectric (FE) insulating layer has potential to replace existing volatile and non-volatile memory. Through the application of electrical pulses, the electrical resistance of an FTJ can be reversibly changed in a non-volatile manner by switching the ferroelectric polarization in the ferroelectric insulator layer.