Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
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Application No.: US18546685Application Date: 2022-02-14
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Publication No.: US20240138169A1Publication Date: 2024-04-25
- Inventor: Koji KUSUNOKI , Kazunori WATANABE , Tomoaki ATSUMI , Satoshi YOSHIMOTO
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP 21028671 2021.02.25
- International Application: PCT/IB2022/051271 2022.02.14
- Date entered country: 2023-08-15
- Main IPC: H10K39/34
- IPC: H10K39/34 ; G06F3/042 ; G06V40/13 ; G09G3/3233 ; H10K59/131

Abstract:
A semiconductor device having a light sensing function and including a high-resolution display portion is provided. The semiconductor device includes a plurality of pixels, and the pixels each include first and second light-receiving devices, first to fifth transistors, a capacitor, and a first wiring. One electrode of the first light-receiving device is electrically connected to the first wiring, and the other electrode is electrically connected to one of a source and a drain of the first transistor. One electrode of the second light-receiving device is electrically connected to the first wiring, and the other electrode is electrically connected to one of a source and a drain of the second transistor. The other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to one electrode of the capacitor, one of a source and a drain of the third transistor, and a gate of the fourth transistor.
Public/Granted literature
- US12069876B2 Semiconductor device and electronic device Public/Granted day:2024-08-20
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