中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

21 records (took 0.022 seconds)

    DISPLAY APPARATUS AND ELECTRONIC DEVICE
    4.
    发明公开
    DISPLAY APPARATUS AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230255060A1

    公开(公告)日：2023-08-10

    申请号：US18012079

    申请日：2021-06-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Susumu KAWASHIMA ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Satoshi YOSHIMOTO

    IPC: H10K59/121 ,  H10K59/65

    CPC classification number: H10K59/1213 ,  H10K59/65 ,  H10K59/40

    Abstract: A display apparatus suitable for wide-grayscale display is provided. The display apparatus includes, in a pixel, two driving transistors and a light-emitting device that are connected in series. One of the transistors is a p-channel transistor and the other of the transistors is an n-channel transistor, and switching therebetween is performed for driving. Such a configuration can inhibit the change in a gate-source voltage in display with a high grayscale level. In addition, the use of a transistor containing a metal oxide in a channel formation region as the n-channel transistor enables an increase in display characteristics in display with a low grayscale level.

    IMAGING DEVICE AND DRIVING METHOD THEREOF
    5.
    发明申请
    IMAGING DEVICE AND DRIVING METHOD THEREOF 有权

    公开(公告)号：US20220292871A1

    公开(公告)日：2022-09-15

    申请号：US17639632

    申请日：2020-09-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Susumu KAWASHIMA ,  Kazunori WATANABE ,  Koji KUSUNOKI ,  Satoshi YOSHIMOTO

    IPC: G06V40/12 ,  H04N5/378 ,  G06F3/041 ,  G06V40/13

    Abstract: To provide an imaging device having a function of biometric authentication and a function of a touch sensor or a near touch sensor. The imaging device includes pixels, current mirror circuits, and CDS circuits. The pixels, the current mirror circuits, and the CDS circuits are electrically connected to read lines. The current mirror circuit includes a first and a second transistor. One of a source and a drain of the first transistor is electrically connected to the read line, and a power supply potential is supplied to the other of a source and a drain of the second transistor. The imaging device outputs imaging data written to the pixel, as a first signal, to the read line in a first period, and then, resets the imaging data and outputs a second signal from the pixel to the read line in a second period. In the first period, a first potential is supplied to terminals, and in the second period, a second potential is supplied to terminals. A difference between the second potential and the power supply potential is greater than a difference between the first potential and the power supply potential.

    SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20240379690A1

    公开(公告)日：2024-11-14

    申请号：US18767164

    申请日：2024-07-09

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Satoshi YOSHIMOTO ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Susumu KAWASHIMA ,  Marina HIYAMA ,  Motoharu SAITO

    IPC: H01L27/12 ,  G09G3/20

    Abstract: A highly functional semiconductor device is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first gate electrode, a first electrode, and a second electrode. The second transistor includes a second semiconductor layer, a second gate electrode, a third electrode, and a fourth electrode. The first gate electrode and the second gate electrode are connected to each other, and the second electrode and the third electrode are connected to each other. A first insulating layer, a second insulating layer, and a second semiconductor layer are stacked over the first semiconductor layer. The first insulating layer is less likely to diffuse hydrogen than the second insulating layer. The second insulating layer contains oxide, the first semiconductor layer contains polycrystalline silicon, and the second semiconductor layer contains a metal oxide. The first transistor is a p-channel transistor and the second transistor is an n-channel transistor.

Patent Agency Ranking