Invention Publication
- Patent Title: COORDINATED IN-MODULE RAS FEATURES FOR SYNCHRONOUS DDR COMPATIBLE MEMORY
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Application No.: US18408558Application Date: 2024-01-09
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Publication No.: US20240143173A1Publication Date: 2024-05-02
- Inventor: Mu-Tien CHANG , Dimin NIU , Hongzhong ZHENG , Sun Young LIM , Indong KIM , Jangseok CHOI
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G11C29/52

Abstract:
A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
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