Invention Publication
- Patent Title: PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
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Application No.: US18431669Application Date: 2024-02-02
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Publication No.: US20240178014A1Publication Date: 2024-05-30
- Inventor: Keren J. KANARIK , Samantha SiamHwa TAN , Yang PAN , Jeffrey MARKS
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/683
Abstract:
A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.
Information query
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