公开(公告)号：US20240419078A1

公开(公告)日：2024-12-19

申请号：US18769038

申请日：2024-07-10

Applicant: Lam Research Corporation

Inventor： Samantha SiamHwa TAN ,  Jengyi YU ,  Da LI ,  Yiwen FAN ,  Yang PAN ,  Jeffrey MARKS ,  Richard A. GOTTSCHO ,  Daniel PETER ,  Timothy William WEIDMAN ,  Boris VOLOSSKIY ,  Wenbing YANG

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/36 ,  G03F7/40

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

公开(公告)号：US20210005472A1

公开(公告)日：2021-01-07

申请号：US16979372

申请日：2019-03-12

Applicant: Lam Research Corporation

Inventor： Keren J. KANARIK ,  Samantha SiamHwa TAN ,  Yang PAN ,  Jeffrey MARKS

IPC: H01L21/67

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

公开(公告)号：US20240258127A1

公开(公告)日：2024-08-01

申请号：US18592853

申请日：2024-03-01

Applicant: Lam Research Corporation

Inventor： Keren J. KANARIK ,  Samantha SiamHwa TAN ,  Yang PAN ,  Jeffrey MARKS

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01L21/67109 ,  H01L21/6833

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

公开(公告)号：US20230295412A1

公开(公告)日：2023-09-21

申请号：US18006552

申请日：2021-07-23

Applicant: Lam Research Corporation

Inventor： Stephen M. SIRARD ,  Gregory BLACHUT ,  Ratchana LIMARY ,  Diane HYMES ,  Yang PAN

IPC: C08L61/18 ,  B05D1/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/29

CPC classification number: C08L61/18 ,  B05D1/005 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/293 ,  C08L2203/162 ,  C08L2203/206

Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.

公开(公告)号：US20240361696A1

公开(公告)日：2024-10-31

申请号：US18769048

申请日：2024-07-10

Applicant: Lam Research Corporation

Inventor： Samantha SiamHwa TAN ,  Jengyi YU ,  Da LI ,  Yiwen FAN ,  Yang PAN ,  Jeffrey MARKS ,  Richard A. GOTTSCHO ,  Daniel PETER ,  Timothy William WEIDMAN ,  Boris VOLOSSKIY ,  Wenbing YANG

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/36 ,  G03F7/40

CPC classification number: G03F7/167 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/168 ,  G03F7/36 ,  G03F7/40

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

公开(公告)号：US20240329539A1

公开(公告)日：2024-10-03

申请号：US18579777

申请日：2022-07-15

Applicant: Lam Research Corporation

Inventor： Samantha SiamHwa TAN ,  Da LI ,  Jengyi YU ,  Ji Yeon KIM ,  Yang PAN

IPC: G03F7/38 ,  G03F7/004 ,  G03F7/36

CPC classification number: G03F7/38 ,  G03F7/0043 ,  G03F7/36

Abstract: Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. The metal-containing photoresist may be treated in a post-exposure bake process involving at least two thermal operations. At least one of the post-exposure bake operations includes exposing the metal-containing photoresist to a moderately elevated temperature in an oxygen-rich atmosphere. This is followed by a post-exposure bake operation that includes exposing the metal-containing photoresist to a highly elevated temperature in an inert gas atmosphere. The multi-step post-exposure bake operations improves etch electivity in a subsequent dry development process.

公开(公告)号：US20240258128A1

公开(公告)日：2024-08-01

申请号：US18593286

申请日：2024-03-01

Applicant: Lam Research Corporation

Inventor： Keren J. KANARIK ,  Samantha SiamHwa TAN ,  Yang PAN ,  Jeffrey MARKS

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01L21/67109 ,  H01L21/6833

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

公开(公告)号：US20240178014A1

公开(公告)日：2024-05-30

申请号：US18431669

申请日：2024-02-02

Applicant: Lam Research Corporation

Inventor： Keren J. KANARIK ,  Samantha SiamHwa TAN ,  Yang PAN ,  Jeffrey MARKS

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01L21/67109 ,  H01L21/6833

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

公开(公告)号：US20230187234A1

公开(公告)日：2023-06-15

申请号：US18163522

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Keren J. KANARIK ,  Samantha SiamHwa TAN ,  Yang PAN ,  Jeffrey MARKS

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/67109 ,  H01L21/6833

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

公开(公告)号：US20230118701A1

公开(公告)日：2023-04-20

申请号：US17914296

申请日：2021-04-06

Applicant: Lam Research Corporation

Inventor： Samantha SiamHwa TAN ,  Daniel PETER ,  Arunima Deya BALAN ,  Younghee LEE ,  Yang PAN

IPC: H01L21/311

Abstract: A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.