Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US18523734Application Date: 2023-11-29
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Publication No.: US20240178277A1Publication Date: 2024-05-30
- Inventor: Katsumi EIKYU , Ryota KURODA , Hitoshi MATSUURA , Sho NAKANISHI
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP 22190871 2022.11.30
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/265 ; H01L21/266 ; H01L29/06 ; H01L29/417 ; H01L29/66 ; H01L29/739
Abstract:
A semiconductor substrate includes a plurality of emitter formation regions separated from each other in a Y direction between a pair of trenches, and a separation region located between the emitter formation regions. A p-type base region is formed in the semiconductor substrate of each of the emitter formation regions and the separation region. An n-type impurity region is formed in the base region of each emitter formation region. The impurity region is also formed in the base region at a position in contact with the pair of trenches in the separation region.
Information query
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