Invention Publication
- Patent Title: SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
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Application No.: US17994487Application Date: 2022-11-28
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Publication No.: US20240178292A1Publication Date: 2024-05-30
- Inventor: Indira Seshadri , Su Chen Fan , Jay William Strane , Stuart Sieg , Shogo Mochizuki
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/088 ; H01L29/06 ; H01L29/417 ; H01L29/66 ; H01L29/775
Abstract:
A semiconductor structure is presented including semiconductor layers of a first nanosheet stack, semiconductor layers of a second nanosheet stack formed over and having a stepped nanosheet formation with respect to the semiconductor layers of the first nanosheet stack, a first epitaxial growth formed adjacent the semiconductor layers of the first nanosheet stack, and a second epitaxial growth formed adjacent the semiconductor layers of the second nanosheet stack such that the second epitaxial growth has a stepped formation with respect to the first epitaxial growth. The second epitaxial growth has a volume greater than a volume of the first epitaxial growth.
Information query
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