Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US18463348Application Date: 2023-09-08
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Publication No.: US20240178298A1Publication Date: 2024-05-30
- Inventor: Takayuki BEPPU , Hiroko TAHARA , Masayuki KITAMURA , Hiroshi TOYODA , Hiroyuki OHTORI
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP 22191519 2022.11.30
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L23/528 ; H10B41/27 ; H10B43/27
Abstract:
In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.
Information query
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