公开(公告)号：US20210407905A1

公开(公告)日：2021-12-30

申请号：US17447332

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Takashi SHIMIZU ,  Takashi FUKUSHIMA ,  Naomi FUKUMAKI ,  Hiroko TAHARA ,  Kenichi IDE

IPC: H01L23/522 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/768

Abstract: According to one embodiment, a semiconductor memory device includes: a plurality of first conductive layers that each include tungsten; a plurality of insulating films that include a stacked portion and a first projecting portion projecting; a semiconductor layer extending through an inside of a stacked body; a charge storage layer arranged between the plurality of first conductive layers and the semiconductor layer; a plurality of second conductive layers that are each arranged on the first projecting portion in such a manner as to be in contact with a single first conductive layer and that include silicon containing an impurity; and a plurality of contact plugs that are each provided on a single second conductive layer in such a manner as to be in contact with the single second conductive layer.

公开(公告)号：US20220077185A1

公开(公告)日：2022-03-10

申请号：US17350513

申请日：2021-06-17

Applicant: Kioxia Corporation

Inventor： Kenichi IDE ,  Hiroko TAHARA

IPC: H01L27/11582 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device according to an embodiment includes a stacked body including a plurality of conductive layers and a plurality of first insulation layers alternately stacked in a first direction. The conductive layers each include a first metal layer and a second metal layer. The first metal layer contains a first metal element and a substance that is chemically reactive with a material gas containing the first metal element. The second metal layer contains the first metal element and has a lower content of the substance than the first metal layer. The first metal layer is disposed between the first insulation layers and the second metal layer.

公开(公告)号：US20240178298A1

公开(公告)日：2024-05-30

申请号：US18463348

申请日：2023-09-08

Applicant: Kioxia Corporation

Inventor： Takayuki BEPPU ,  Hiroko TAHARA ,  Masayuki KITAMURA ,  Hiroshi TOYODA ,  Hiroyuki OHTORI

IPC: H01L29/49 ,  H01L23/528 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L29/495 ,  H01L23/5283 ,  H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.