QUANTUM DOT STRUCTURE AND METHOD OF PRODUCING A QUANTUM DOT STRUCTURE
Abstract:
In an embodiment a quantum dot structure includes a core having a III-V-compound semiconductor material, an intermediate region having a III-V-compound semiconductor material at least partially surrounding the core, a shell having a III-V-compound semiconductor material at least partially surrounding the core and the intermediate region and a passivation region having a II-VI-compound semiconductor material at least partially surrounding the shell, wherein the core, the intermediate region, and the shell form a quantum well structure.
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