Invention Publication
- Patent Title: HALF-BRIDGE CIRCUIT USING MONOLITHIC FLIP-CHIP GAN POWER DEVICES
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Application No.: US18537620Application Date: 2023-12-12
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Publication No.: US20240178675A1Publication Date: 2024-05-30
- Inventor: Daniel M. Kinzer , Santosh Sharma , Ju Jason Zhang
- Applicant: Navitas Semiconductor Limited
- Applicant Address: IE Dublin
- Assignee: Navitas Semiconductor Limited
- Current Assignee: Navitas Semiconductor Limited
- Current Assignee Address: IE Dublin
- The original application number of the division: US16151695 2018.10.04
- Main IPC: H02J7/00
- IPC: H02J7/00 ; H01L23/495 ; H01L23/528 ; H01L23/62 ; H01L25/07 ; H01L27/02 ; H01L27/088 ; H01L29/10 ; H01L29/20 ; H01L29/40 ; H01L29/417 ; H02M1/00 ; H02M1/088 ; H02M3/155 ; H02M3/157 ; H02M3/158 ; H03K3/012 ; H03K3/356 ; H03K17/10 ; H03K19/0185
Abstract:
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
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