Invention Publication
- Patent Title: PLASMA PROCESSING METHOD
-
Application No.: US17908177Application Date: 2021-10-22
-
Publication No.: US20240194489A1Publication Date: 2024-06-13
- Inventor: Yusuke Nakatani , Yasushi Sonoda , Motohiro Tanaka
- Applicant: Hitachi High-Tech Corporation
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Hitachi High-Tech Corporation
- Current Assignee: Hitachi High-Tech Corporation
- Current Assignee Address: JP Minato-ku, Tokyo
- International Application: PCT/JP2021/039032 2021.10.22
- Date entered country: 2022-08-30
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01L21/28 ; H01L29/423 ; H01L29/49 ; H01L29/66
Abstract:
HfO2 is to be selectively laterally etched and to SiGe. In order to manufacture a device in a next generation three-dimensional structure such as GAA, in a plasma processing method that laterally etches HfO2 using a vacuum processing apparatus that is capable of perform radical etching, a flow rate ratio is set such that an SiCl4 gas is added to a BCl3 gas, a flow rate ratio of the SiCl4 gas at this time is lower than a flow rate ratio of the BCl3 gas, and an SiClx deposition to be deposited on SiGe is larger than an SiClx deposition to be deposited on HfO2, and thus HfO2 is selectively etched to SiGe.
Information query
IPC分类:
