公开(公告)号：USD1008986S1

公开(公告)日：2023-12-26

申请号：US29789929

申请日：2021-10-25

Applicant: Hitachi High-Tech Corporation

Designer： Yusuke Nakatani ,  Kazuumi Tanaka ,  Masahiro Yamaoka ,  Yasushi Sonoda ,  Taku Iwase

Abstract: FIG. 1 is a front, top, and right side perspective view of an ion shield plate for plasma processing apparatus according to the design;
FIG. 2 is a front view thereof;
FIG. 3 is a top plan view thereof;
FIG. 4 is a bottom plan view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a left side view thereof;
FIG. 7 is a rear view thereof;
FIG. 8 is a cross-sectional view taken along line 8-8 of FIG. 2; and,
FIG. 9 is an enlarged view of the portion shown in box, labeled, “FIG. 9,” in FIG. 8.
The dot-dash line box shown in FIG. 8 defines the enlarged portion view shown in FIG. 9 and forms no part of the claimed design.

公开(公告)号：US20240194450A1

公开(公告)日：2024-06-13

申请号：US17907857

申请日：2021-06-28

Applicant: Hitachi High-Tech Corporation

Inventor： Yasushi Sonoda ,  Motohiro Tanaka ,  Yusuke Nakatani

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32201 ,  H01J2237/327 ,  H01L21/67069

Abstract: A plasma processing device and method which allow control of a density ratio between ions and radicals, including a processing chamber, a radio frequency power supply which supplies microwave radio frequency power for plasma generation, a magnetic field generating mechanism which generates a magnetic field in the processing chamber, a sample stand disposed in the processing chamber, and a shielding plate disposed above the sample stand for shielding incidence of an ions onto the sample stand. The magnetic field generating mechanism includes a coil disposed around an outer periphery of the processing chamber, and a power supply connected to the coil. The mechanism allows a power supply of the magnetic field generating mechanism or the radio frequency power supply to control a plasma generating position with respect to the shielding plate, and to generate plasma by periodically changing the plasma generating position vertically with respect to the shielding plate.

公开(公告)号：US20220319809A1

公开(公告)日：2022-10-06

申请号：US17273838

申请日：2019-12-23

Applicant: Hitachi High-Tech Corporation

Inventor： Taku Iwase ,  Naoyuki Kofuji ,  Yasushi Sonoda ,  Yusuke Nakatani ,  Motohiro Tanaka

IPC: H01J37/32

Abstract: An object of the invention is to provide a plasma processing apparatus capable of both isotropic etching in which a flux of ions to a sample is reduced and anisotropic etching in which ions are incident on a sample in the same chamber. For this purpose, the invention includes: a processing chamber in which a sample is subjected to plasma processing; a radio frequency power source configured to supply radio frequency power for generating plasma through a first member of a dielectric material disposed above the processing chamber; a magnetic field forming mechanism configured to form a magnetic field inside the processing chamber; a sample stage where the sample is placed; and a second member disposed between the first member and the sample stage and having a through hole formed therein, in which the through hole is formed at a position where a distance thereof from a center of the second member is a predetermined distance or more, and a distance from the first member to the second member is a distance such that a density of plasma generated between the first member and the second member is a cutoff density or higher.

公开(公告)号：US20240194489A1

公开(公告)日：2024-06-13

申请号：US17908177

申请日：2021-10-22

Applicant: Hitachi High-Tech Corporation

Inventor： Yusuke Nakatani ,  Yasushi Sonoda ,  Motohiro Tanaka

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/31122 ,  H01L21/02181 ,  H01L21/28255 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439

Abstract: HfO2 is to be selectively laterally etched and to SiGe. In order to manufacture a device in a next generation three-dimensional structure such as GAA, in a plasma processing method that laterally etches HfO2 using a vacuum processing apparatus that is capable of perform radical etching, a flow rate ratio is set such that an SiCl4 gas is added to a BCl3 gas, a flow rate ratio of the SiCl4 gas at this time is lower than a flow rate ratio of the BCl3 gas, and an SiClx deposition to be deposited on SiGe is larger than an SiClx deposition to be deposited on HfO2, and thus HfO2 is selectively etched to SiGe.