Invention Publication
- Patent Title: POWER GATING CIRCUIT AND A SEMICONDUCTOR CHIP INCLUDING THE SAME
-
Application No.: US18515355Application Date: 2023-11-21
-
Publication No.: US20240195406A1Publication Date: 2024-06-13
- Inventor: JINOOK JUNG , JAEWOO PARK , MYOUNGBO KWAK , JUNGHWAN CHOI
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220172004 2022.12.09
- Main IPC: H03K17/30
- IPC: H03K17/30 ; H03K17/687 ; H03K19/0185

Abstract:
A power gating circuit including: a power gating transistor; a gate bias generating circuit configured to provide a gate bias control signal to the gate of the power gating transistor; and a body bias generating circuit configured to provide a body bias control signal to the body of the power gating transistor, wherein when the power gating transistor is turned on, the gate bias generating circuit provides the gate bias control signal having a positive voltage level and the body bias generating circuit provides the body bias control signal having the positive voltage level, and when the power gating transistor is turned off, the gate bias generating circuit provides the gate bias control signal having a ground voltage level or a negative voltage level, and the body bias generating circuit provides the body bias control signal having the ground voltage level or the negative voltage level.
Information query