公开(公告)号：US20240195406A1

公开(公告)日：2024-06-13

申请号：US18515355

申请日：2023-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINOOK JUNG ,  JAEWOO PARK ,  MYOUNGBO KWAK ,  JUNGHWAN CHOI

IPC: H03K17/30 ,  H03K17/687 ,  H03K19/0185

CPC classification number: H03K17/302 ,  H03K17/687 ,  H03K19/018507 ,  H03K2217/0081

Abstract: A power gating circuit including: a power gating transistor; a gate bias generating circuit configured to provide a gate bias control signal to the gate of the power gating transistor; and a body bias generating circuit configured to provide a body bias control signal to the body of the power gating transistor, wherein when the power gating transistor is turned on, the gate bias generating circuit provides the gate bias control signal having a positive voltage level and the body bias generating circuit provides the body bias control signal having the positive voltage level, and when the power gating transistor is turned off, the gate bias generating circuit provides the gate bias control signal having a ground voltage level or a negative voltage level, and the body bias generating circuit provides the body bias control signal having the ground voltage level or the negative voltage level.