- 专利标题： ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER
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申请号： US18428198申请日： 2024-01-31
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公开(公告)号： US20240222470A1公开(公告)日： 2024-07-04
- 发明人: Sebastian Meier , Helmut Rinck , Mike Mittelstaedt
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 分案原申请号： US16688060 2019.11.19
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; C01G55/00 ; H01L21/02 ; H01L21/263 ; H01L21/28 ; H01L21/285 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01L23/00 ; H01L23/532 ; H01L29/49 ; H01L29/78 ; H01L21/8238
摘要：
A microelectronic device includes a substrate a platinum-containing layer over the substrate. The platinum-containing layer includes a first segment and a second segment adjacent to the first segment, and has a first surface and a second surface opposite the first surface closer to the substrate than the first surface. A first spacing between the first segment and the second segment at the first surface is greater than a second spacing between the first segment and the second segment at the second surface. A width of the first segment along the first surface is less than twice a thickness of the first segment, and the second spacing is less than twice the thickness of the first segment.
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