发明公开
- 专利标题： METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE AND BUCK CONVERTER
-
申请号： US18608197申请日： 2024-03-18
-
公开(公告)号： US20240223087A1公开(公告)日： 2024-07-04
- 发明人: Chu Fu CHEN , Chi-Feng HUANG , Chia-Chung CHEN , Chin-Lung CHEN , Victor Chiang LIANG , Chia-Cheng PAO
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H02M3/158
- IPC分类号： H02M3/158 ; H01L21/84 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/80 ; H01L21/265
摘要：
A method of making a semiconductor device includes implanting a source/drain (S/D) in the substrate adjacent to a gate structure. The method further includes implanting a lightly doped drain (LDD) region in the substrate in direct contact with the S/D, wherein a dopant concentration in the LDD region is less than a dopant concentration in the S/D. The method further includes implanting a doping extension region in the substrate in direct contact with the LDD region, wherein a maximum depth of the doping extension region is 10-times to 30-times greater than a maximum depth of the LDD.
信息查询
IPC分类:
