发明公开
- 专利标题： SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING THE SAME
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申请号： US18380930申请日： 2023-10-17
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公开(公告)号： US20240304697A1公开(公告)日： 2024-09-12
- 发明人: TSE-YAO HUANG
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW NEW TAIPEI CITY
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW NEW TAIPEI CITY
- 分案原申请号： US18119953 2023.03.10
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L23/29 ; H01L23/31 ; H01L23/532 ; H01L29/40
摘要：
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and having a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer comprises germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.
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