- 专利标题： SEMICONDUCTOR DEVICE INCLUDING ISOLATION STRUCTURE WITH IMPURITY AND METHOD FOR MANUFACTURING THE SAME
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申请号： US18135350申请日： 2023-04-17
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公开(公告)号： US20240347375A1公开(公告)日： 2024-10-17
- 发明人: KUO-CHUNG HSU , EN-JUI LI
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW NEW TAIPEI CITY
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW NEW TAIPEI CITY
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate having an active region and a shallow trench isolation (STI) adjacent to the active region of the substrate. The STI includes a charge trapping layer and a liner disposed between the charge trapping layer and the active region of the substrate, wherein the charge trapping layer is doped with an impurity.
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